Eizo Miyauchi: search on Z-Library

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1

Ion species and energy control of finely focused FIBs for maskless in situ microfabrication processes

Eizo Miyauchi, Hiroshi Arimoto, Hideki Kitada

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1989

Language:

english

File:

PDF, 501 KB

english, 1989

2

Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling

Tackeuchi, Atsushi, Inata, Tsuguo, Muto, Shunichi, Miyauchi, Eizo

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 549 KB

1989

3

Superconducting Transition of In x Sn 1- x Te 1.02

Nakajima, Tetsuo, Isino, Masahiro, Miyauchi, Hidekazu, Kanda, Eizo

Journal:

Journal of the Physical Society of Japan

Year:

1973

File:

PDF, 196 KB

1973

4

Growth and characterization of GaAs0.5Sb0.5 lattice-matched to InP by molecular beam epitaxy

Yoshiaki Nakata, Toshio Fujii, Adarsh Sandhu, Yoshihiro Sugiyama, Eizo Miyauchi

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 281 KB

english, 1988

5

Focused ion beam doping for GaAs MBE growth

Hisao Hashimoto, Akira Takamori, Hiroshi Arimoto, Tetsuo Morita, Eizo Miyauchi

Journal:

Microelectronic Engineering

Year:

1986

Language:

english

File:

PDF, 661 KB

english, 1986

6

Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Nakata, Yoshiaki, Sugiyama, Yoshihiro, Ueda, Osamu, Sasa, Shigehiko, Fujii, Toshio, Miyauchi, Eizo

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 291 KB

english, 1990

7

Effects of ultrasound on cementoblast metabolism in vitro

Diego Araujo Dalla-Bona, Eiji Tanaka, Hiroko Oka, Eizo Yamano, Nobuhiko Kawai, Mutsumi Miyauchi, Takashi Takata, Kazuo Tanne

Journal:

Ultrasound in Medicine & Biology

Year:

2006

Language:

english

File:

PDF, 206 KB

english, 2006

8

Inhibitory effects of orally administrated liposomal bovine lactoferrin on the LPS-induced osteoclastogenesis

Miyauchi, Mutsumi, Furusyo, Hisako, Kawazoe, Aki, Ishikado, Atsushi, Makino, Taketoshi, Tanne, Kazuo, Tanaka, Eiji, Takata, Takashi, Yamano, Eizo

Journal:

Laboratory Investigation

Year:

2010

Language:

english

File:

PDF, 756 KB

english, 2010

9

Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity

Miyauchi, Eizo, Arimoto, Hiroshi, Morita, Tetsuo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

File:

PDF, 674 KB

1987

10

Maskless ion implantation technology for III–V compound semiconductors

Eizo Miyauchi, Hisao Hashimoto

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1985

Language:

english

File:

PDF, 749 KB

english, 1985

11

Computor control of maskless ion implanter with AuSiBe LM ion source for III–V compound semiconductors

Eizo Miyauchi, Hiroshi Arimoto, Yasuo Bamba, Akira Takamori, Hisao Hashimoto

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1985

Language:

english

File:

PDF, 944 KB

english, 1985

12

Maskless ion implantation system for three-dimensional fine doping structures in III–V compound semiconductors

Eizo Miyauchi, Hisao Hashimoto

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1987

Language:

english

File:

PDF, 2.55 MB

english, 1987

13

The Effect of Removal of the Disc on the Friction in the Temporomandibular Joint

Eiji Tanaka, Diego A. Dalla-Bona, Tatsunori Iwabe, Nobuhiko Kawai, Eizo Yamano, Theo van Eijden, Masao Tanaka, Mutsumi Miyauchi, Takashi Takata, Kazuo Tanne

Journal:

Journal of Oral and Maxillofacial Surgery

Year:

2006

Language:

english

File:

PDF, 142 KB

english, 2006

14

Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto, Atsushi Tackeuchi, Tsuguo Inata, Eizo Miyauchi, Toshio Fujii

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 314 KB

english, 1990

15

Calculation of electronic structure and photoabsorption spectra of monosilane molecules SiH4, SiF4, and SiCl4

Ishikawa, Hideaki, Fujima, Kazumi, Adachi, Hirohiko, Miyauchi, Eizo, Fujii, Toshio

Journal:

The Journal of Chemical Physics

Year:

1991

Language:

english

File:

PDF, 1.03 MB

english, 1991

16

Application of focused ion beam technology to maskless ion implantation in a molecular beam epitaxy grown GaAs or AlGaAs epitaxial layer for three-dimensional pattern doping crystal growth

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

1986

Language:

english

File:

PDF, 913 KB

english, 1986

17

Scan speed effects on enhanced disordering of GaAs-AlGaAs superlattices by focused Si ion beam implantation

Ishida, Koji, Matsui, Kazunori, Fukunaga, Toshiaki, Kobayashi, Junji, Morita, Tetsuo, Miyauchi, Eizo, Nakashima, Hisao

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 625 KB

english, 1987

18

Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

1983

Language:

english

File:

PDF, 489 KB

english, 1983

19

Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide

Takamori, Akira, Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Morita, Tetsuo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 478 KB

1985

20

Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation

Ishida, Koji, Takamori, Takeshi, Matsui, Kazunori, Fukunaga, Toshiaki, Morita, Tetsuo, Miyauchi, Eizo, Hashimoto, Hisao, Nakashima, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 411 KB

1986

21

Thermal Diffusion of Buried Beryllium and Silicon Layer in GaAs Doped by Focused Ion Beam Implantation

Morita, Tetsuo, Kobayashi, Junji, Takamori, Takeshi, Takamori, Akira, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

File:

PDF, 610 KB

1987

22

Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells

Brillouet, Francois, Ishida, Koji, Morita, Tetsuo, Miyauchi, Eizo, Takamori, Takeshi, Nakashima, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

File:

PDF, 584 KB

1987

23

Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs

Bamba, Yasuo, Miyauchi, Eizo, Nakajima, Masato, Arimoto, Hiroshi, Takamori, Akira, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 511 KB

1985

24

Maskless all-UHV process for III-V compound semiconductors

Journal:

Critical Reviews in Solid State and Material Sciences

Year:

1991

Language:

english

File:

PDF, 1.40 MB

english, 1991

25

Novel Method for Measuring Intensity Distribution of Focused Ion Beams

Arimoto, Hiroshi, Takamori, Akira, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1983

File:

PDF, 525 KB

1983

26

A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors

Miyauchi, Eizo, Arimoto, Hiroshi, Hashimoto, Hisao, Furuya, Tsuneo, Utsumi, Takao

Journal:

Japanese Journal of Applied Physics

Year:

1983

File:

PDF, 455 KB

1983

27

Alignment Accuracy of Focused Ion Beam Implantation

Morita, Tetsuo, Arimoto, Hiroshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 183 KB

english, 1987

28

Photon Stimulated Desorption from Finely Polished Metals Irradiated with Synchrotron Radiation

Miyauchi, Eizo, Okamura, Sigeru, Taguchi, Takao, Goto, Shunji, Hisatsugu, Tokushige

Journal:

Japanese Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 844 KB

english, 1991

29

Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation

Takamori, Akira, Sugata, Sumio, Asakawa, Kiyoshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 205 KB

english, 1987

30

Sn Ion Doping during GaAs MBE with Field Ion Gun

Bamba, Yasuo, Miyauchi, Eizo, Kuramoto, Kazuo, Takamori, Akira, Furuya, Tsuneo

Journal:

Japanese Journal of Applied Physics

Year:

1983

Language:

english

File:

PDF, 203 KB

english, 1983

31

Effect of Ambient Gases on Emission Properties of Pd-Ni-Si-Be-B LM Ion Source

Arimoto, Hiroshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 396 KB

english, 1987

32

Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System

Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Takamori, Akira, Hashimoto, Hisao, Utsumi, Takao

Journal:

Japanese Journal of Applied Physics

Year:

1983

Language:

english

File:

PDF, 817 KB

english, 1983

33

Focused Si Ion Implantation in GaAs

Bamba, Yasuo, Miyauchi, Eizo, Arimoto, Hiroshi, Kuramoto, Kazuo, Takamori, Akira, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1983

Language:

english

File:

PDF, 838 KB

english, 1983

34

GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Takamori, Akira, Miyauchi, Eizo, Arimoto, Hiroshi, Bamba, Yasuo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 207 KB

english, 1984

35

Reduced Damage Generation in GaAs Implanted with Focused Be Ions

Bamba, Yasuo, Miyauchi, Eizo, Arimoto, Hiroshi, Takamori, Akira, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1984

File:

PDF, 481 KB

1984

36

Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation

Ishida, Koji, Miyauchi, Eizo, Morita, Tetsuo, Takamori, Takeshi, Fukunaga, Toshiaki, Hashimoto, Hisao, Nakashima, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

File:

PDF, 654 KB

1987

37

Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation

Morita, Tetsuo, Takamori, Akira, Arimoto, Hiroshi, Miyauchi, Eizo, Hashimoto, Hisao

Journal:

Japanese Journal of Applied Physics

Year:

1987

File:

PDF, 704 KB

1987

38

SPIE Proceedings [SPIE 1986 Microlithography Conferences - Santa Clara (Monday 10 March 1986)] Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V - Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe

Bamba, Yasuo, Miyauchi, Eizo, Arimoto, Hiroshi, Morita, Tetsuo, Takamori, Akira, Hashimoto, Hisao, Blais, Phillip D.

Year:

1986

Language:

english

File:

PDF, 2.93 MB

english, 1986

39

Carrier Density Dependences of the Superconducting Transitions in n-Type In x Sn 1- x Te 1+ y

Miyauchi, Hidekazu, Nakajima, Tetsuo, Kanda, Eizo

Journal:

Journal of the Physical Society of Japan

Year:

1974

File:

PDF, 192 KB

1974